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| 1.2V Drive Nch+Nch MOSFET EM6K7 Structure Silicon N-channel MOSFET Applications Switching Dimensions (Unit : mm) EMT6 Features 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low voltage drive (1.2V) makes this device ideal for portable equipment. Inner circuit (6) Each lead has same dimensions Abbreviated symbol : K07 (5) 1 (4) Packaging specifications Package Type Code Basic ordering unit (pieces) EM6K7 Taping T2R 8000 2 2 1 (1) (2) (3) Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Symbol VDSS VGSS ID IDP 1 PD 2 1 Esd Protection diode 2 Body Diode (1)Tr1 (2)Tr1 (3)Tr2 (4)Tr2 (5)Tr2 (6)Tr1 Source Gate Drain Source Gate Drain Limits 20 8 200 400 150 120 150 -55 to +150 Unit V V mA mA mW / TOTAL mW / ELEMENT C C Total power dissipation Channel temperature Range of storage temperature 1 Pw10s, Duty cycle1% 2 Each terminal mounted on a recommended land. Tch Tstg Thermal resistance Parameter Channel to ambient Each terminal mounted on a recommended land Symbol Rth(ch-a) Limits 833 1042 Unit C/W / TOTAL C/W / ELEMENT www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.07 - Rev.A EM6K7 Electrical characteristics (Ta=25C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Symbol IGSS V(BR)DSS IDSS VGS(th) Min. - 20 - 0.3 - Static drain-source on-state resistance RDS(on) |Yfs| Ciss Coss Crss td(on) tr td(off) tf - - - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Pulsed Data Sheet Typ. - - - - 0.8 1.0 1.2 1.6 - 25 10 10 5 10 15 10 Max. 10 - 1 1.0 1.2 1.4 2.4 4.8 - - - - - - - - Unit A V A V mS pF pF pF ns ns ns ns Conditions VGS=8V, VDS=0V ID=1mA, VGS=0V VDS=20V, VGS=0V VDS=10V, ID=1mA ID=200mA, VGS=2.5V ID=200mA, VGS=1.8V ID=40mA, VGS=1.5V ID=20mA, VGS=1.2V VDS=10V, ID=200mA VDS=10V VGS=0V f=1MHz VDD 10V, ID=150mA VGS=4.0V RL 67 RG=10 200 - - - - - - - Body diode characteristics (Source-drain) (Ta=25C) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. 1.2 Unit V Conditions IS= 100mA, VGS=0V www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 2/4 2009.07 - Rev.A EM6K7 Electrical characteristics curves Data Sheet 0.5 Ta=25C Pulsed VGS= 1.5V DRAIN CURRENT : ID [A] 0.5 DRAIN CURRENT : ID (A) 1 VDS=10V Pulsed DRAIN CURRENT : ID [A] 0.4 0.4 VGS= 2.5V VGS= 1.8V VGS= 1.3V 0.1 0.3 VGS= 1.3V 0.2 VGS= 4.5V VGS= 2.5V VGS= 1.8V VGS= 1.2V 0.3 VGS= 1.2V VGS= 1.5V 0.1 Ta=25C Pulsed 0 2 4 6 8 10 0.01 Ta=125C 75C 25C -25C 0.2 0.001 0.1 0.0001 0 0 0.2 0.4 0.6 0.8 1 0 0.00001 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics() DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics() Fig.3 Typical transfer characteristics 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] 1000 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] Ta= 25C Pulsed 10000 VGS= 1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.0V VGS= 4.0V Pulsed 10000 Ta=125C Ta=75C Ta=25C Ta= -25C VGS= 2.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 1000 100 0.001 0.01 0.1 1 100 0.001 0.01 0.1 1 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current() DRAIN-CURRENT : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current() DRAIN-CURRENT : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current() 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] VGS= 1.8V Pulsed 10000 VGS= 1.5V Pulsed 10000 VGS= 1.2V Pulsed 1000 Ta=125C Ta=75C Ta=25C Ta= -25C 100 0.001 1000 Ta=125C Ta=75C Ta=25C Ta= -25C 100 0.001 1000 Ta=125C Ta=75C Ta=25C Ta= -25C 0.01 0.1 1 0.01 0.1 1 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current() DRAIN-CURRENT : ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current() DRAIN-CURRENT : ID [A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current() www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/4 2009.07 - Rev.A EM6K7 Data Sheet 1 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[] VDS= 10V Pulsed SOURCE CURRENT : IS (A) 1 VGS=0V Pulsed 2.5 ID = 0.2A 2 Ta=25C Pulsed Ta= -25C Ta=25C Ta=75C Ta=125C 0.1 Ta=125C 75C 25C -25C 1.5 1 0.5 ID = 0.02A 0.1 0.01 0.1 DRAIN-CURRENT : ID [A] Fig.10 Forward Transfer Admittance vs. Drain Current 1 0.01 0.0 0.5 1 1.5 0 0 2 4 6 8 10 SOURCE-DRAIN VOLTAGE : VSD (V) GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Source current vs. source-drain voltage Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 SWITHING TIME : t (ns) 100 CAPACITANCE : C [pF] Ta=25C VDD=10V VGS=4V RG=10 Pulsed 100 Ciss 10 10 td(off) tf td(on) tr Crss Coss Ta=25C f=1MHz VGS=0V 0.01 0.1 1 10 100 1 0.01 0.1 DRAIN CURRENT : ID (A) 1 1 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Switching characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage Measurement circuit Pulse width VGS ID VDS D.U.T. RG RL VGS VDS 50% 10% 10% 90% 50% VDD 10% 90% 90% td (off) tf toff td (on) ton tr Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 4/4 2009.07 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. R0039A |
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